Trace Width (W) * Millimeters (mm)

Substrate Height (H) * Millimeters (mm)

Dielectric Constant (εr) * Relative permittivity

Trace Thickness (T) Millimeters (mm)

Desired Impedance Ohms (Ω)

50Ω, 0.2mm W, 0.8mm H, FR4 50Ω, 0.3mm W, 1.0mm H, FR4

— Ω

Characteristic impedance

Microstrip

Trace (W)

Substrate (H)

GND

Z0— Ω

W— mm

H— mm

εr—

εeff—

Trace Width (W) * Millimeters (mm)

Substrate Height (H) * Millimeters (mm)

Dielectric Constant (εr) * Relative permittivity

Trace Thickness (T) Millimeters (mm)

Desired Impedance Ohms (Ω)

50Ω, 0.15mm W, 0.8mm H, FR4 50Ω, 0.2mm W, 1.0mm H, FR4

— Ω

Characteristic impedance

Stripline

GND

Substrate (H)

Trace (W)

Substrate (H)

GND

Z0— Ω

W— mm

H— mm

εr—

Center Conductor Width (W) * Millimeters (mm)

Gap (S) * Millimeters (mm)

Substrate Height (H) * Millimeters (mm)

Dielectric Constant (εr) * Relative permittivity

Trace Thickness (T) Millimeters (mm)

Desired Impedance Ohms (Ω)

50Ω, W=0.2mm, S=0.1mm, FR4 50Ω, W=0.3mm, S=0.15mm, FR4

— Ω

Characteristic impedance

CPW

GND

Substrate (H)

GND

Z0— Ω

W— mm

S— mm

εr—